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IRF510PBF - Vishay

Description: Trans MOSFET N-CH 100V 5.6A

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IRF510PBF - Vishay - PCB symbol
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PCB Footprints
IRF510PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRF510PBF-1
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3D Models
IRF510PBF - Vishay - 3D model - Transistor Outline, Vertical - IRF510PBF-1
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IRF510PBF Details

  • Manufacturer Part Number:

    IRF510PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    5.6 A

  • Drain-source On Resistance-Max:

    0.54 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    20 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF510PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IRF510PBF is 175°C.
  • Yes, the IRF510PBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses and thermal management.
  • To ensure proper biasing, maintain a gate-source voltage (Vgs) between 4V and 10V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate drive circuitry is capable of providing sufficient current to charge and discharge the gate capacitance.
  • The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω and 100Ω. A lower value can help reduce switching losses, while a higher value can help reduce electromagnetic interference (EMI).
  • While the IRF510PBF can be used in linear amplifier applications, it's not the most suitable choice due to its relatively high on-state resistance (Rds(on)) and limited safe operating area (SOA). A more suitable device for linear amplifier applications would be a lateral MOSFET or a dedicated linear amplifier transistor.

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IRF510PBF Overview

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