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IRF510SPBF - Vishay

Description: MOSFET N-Channel 100V 5.6A D2PAK Vishay IRF510SPBF N-channel MOSFET Transistor, 5.6 A, 100 V, 3-Pin D2PAK

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IRF510SPBF - Vishay PCB footprint - Other - Other - TO-263AB_3
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IRF510SPBF - Vishay  - 3D model - Other - TO-263AB_3
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IRF510SPBF Details

  • Manufacturer Part Number:

    IRF510SPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK

  • Package Description:

    LEAD FREE, PLASTIC, SMD-220, D2PAK-3

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    5.6 A

  • Drain-source On Resistance-Max:

    0.54 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    43 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF510SPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF510SPBF is -55°C to 175°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be within the recommended operating range.
  • The maximum current rating for the IRF510SPBF is 5.6A, but this can be affected by the operating temperature and other factors.
  • To protect the IRF510SPBF, use a voltage regulator or a zener diode to limit the voltage, and consider adding a current-sensing resistor and a fuse or a current limiter to prevent overcurrent.
  • Yes, the IRF510SPBF is suitable for high-frequency switching applications up to 1MHz, but be aware of the device's switching characteristics and ensure proper layout and decoupling to minimize ringing and EMI.

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IRF510SPBF Overview

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Image Part Number Model
Part Image IRF510STRLPBF Vishay Siliconix

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF510STRLPBF International Rectifier

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRF510S International Rectifier

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF510STRL Vishay Siliconix

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF510STRL Vishay Intertechnologies

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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