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IRF510STRRPBF - Vishay

Description: MOSFETs TO263 100V 5.6A N-CH MOSFET

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IRF510STRRPBF Details

  • Manufacturer Part Number:

    IRF510STRRPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    LEAD FREE, PLASTIC, SMD-220, D2PAK-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    5.6 A

  • Drain-source On Resistance-Max:

    0.54 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    43 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF510STRRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF510STRRPBF is -55°C to 150°C.
  • No, the IRF510STRRPBF is a standard MOSFET and requires a higher gate-source voltage (typically 10V) to fully turn on.
  • The maximum current rating for the IRF510STRRPBF is 5.6A.
  • The IRF510STRRPBF has a relatively high gate-drain capacitance, which may limit its suitability for high-frequency switching applications. It's recommended to use a MOSFET with lower capacitance for high-frequency applications.
  • The IRF510STRRPBF is not recommended for linear amplifier applications due to its high drain-source resistance (RDS(on)) and limited safe operating area (SOA). A MOSFET with lower RDS(on) and a larger SOA is recommended for linear amplifier applications.

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IRF510STRRPBF Overview

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IRF510STRRPBF Alternates

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Image Part Number Model
Part Image IRF510STRLPBF Vishay Siliconix

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF510STRRPBF International Rectifier

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRF510STRL International Rectifier

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF510S Vishay Siliconix

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF510STRL Vishay Siliconix

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for IRF510STRRPBF, check out Findchips.com