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IRF520PBF - Vishay

Description: TRANS MOSFET N-CH 100V 9.2A 3-PIN 3+TAB Vishay Siliconix IRF520PBF N-channel MOSFET Transistor, 9.2 A, 100 V, 3-Pin TO-220AB

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PCB Footprints
IRF520PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1
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3D Models
IRF520PBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1
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IRF520PBF Details

  • Manufacturer Part Number:

    IRF520PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.05

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    9.2 A

  • Drain-source On Resistance-Max:

    0.27 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Pulsed Drain Current-Max (IDM):

    37 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF520PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF520PBF is -55°C to 175°C.
  • Yes, the IRF520PBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses and thermal management.
  • To ensure the IRF520PBF is fully turned on and off, apply a gate-source voltage (Vgs) of at least 10V for turn-on and -5V for turn-off. Also, use a gate driver with a low output impedance to minimize rise and fall times.
  • The recommended gate resistor value for the IRF520PBF is between 10Ω to 100Ω, depending on the specific application and switching frequency.
  • No, the IRF520PBF is not designed for linear mode operation. It's a switching device, and operating it in linear mode can lead to excessive power dissipation and reduced reliability.

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IRF520PBF Overview

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Image Part Number Model
Part Image IRF520 Vishay Siliconix

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF520 STMicroelectronics

Power Field-Effect Transistor, 10A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF520 Microsemi Corporation (now Microchip)

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220

Part Image IRF520 Vishay Intertechnologies

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF520 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

For a full list of alternate parts for IRF520PBF, check out Findchips.com