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IRF540 - Vishay

Description: MOSFET N-Chan 100V 28 Amp

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IRF540 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1
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IRF540 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1
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IRF540 Details

  • Manufacturer Part Number:

    IRF540

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220AB, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    230 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    28 A

  • Drain-source On Resistance-Max:

    0.077 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF540 Frequently Asked Questions (FAQs)

  • The maximum SOA for the IRF540 is typically defined by the voltage and current ratings. The maximum voltage rating is 100V and the maximum current rating is 28A. However, it's essential to consider the thermal and power dissipation limitations to ensure safe operation.
  • To calculate the power dissipation of the IRF540, you need to consider the voltage drop across the MOSFET (Vds) and the current flowing through it (Ids). The power dissipation (Pd) can be calculated using the formula: Pd = Vds x Ids. Additionally, you should also consider the thermal resistance (Rth) and the junction temperature (Tj) to ensure the device operates within its thermal limits.
  • The recommended gate drive voltage for the IRF540 is typically between 10V to 15V. However, the optimal gate drive voltage may vary depending on the specific application and the desired switching characteristics. A higher gate drive voltage can result in faster switching times, but it may also increase the power consumption and electromagnetic interference (EMI).
  • Yes, the IRF540 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate charge. The IRF540 has a relatively high gate charge, which may limit its suitability for very high-frequency applications. Additionally, the device's parasitic capacitances and inductances should be considered to ensure stable operation.
  • To protect the IRF540 from overvoltage and overcurrent conditions, you can use a combination of protection circuits, such as voltage clamps, current limiters, and thermal protection devices. Additionally, it's essential to ensure that the device is operated within its specified voltage and current ratings, and that the thermal management is adequate to prevent overheating.

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IRF540 Overview

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Part Image IRF542 New Jersey Semiconductor Products Inc

Power Field-Effect Transistor, 28A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRF540 Intersil Corporation

Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF542 Harris Semiconductor

Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image BUK455-100A NXP Semiconductors

Power Field-Effect Transistor, 26A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF542 STMicroelectronics

Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

For a full list of alternate parts for IRF540, check out Findchips.com