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IRF540NPBF - Infineon

Description: MOSFET N-Channel 100V 33A TO220AB International Rectifier IRF540NPBF N-channel MOSFET Transistor, 33 A, 100 V, 3-Pin TO-220AB

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IRF540NPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB_5
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IRF540NPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB_5
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IRF540NPBF Details

  • Manufacturer Part Number:

    IRF540NPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.3

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    185 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.044 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    250

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    130 W

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF540NPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF540NPBF is -55°C to 175°C.
  • Yes, the IRF540NPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses and thermal management.
  • To ensure proper cooling, provide a heat sink with a thermal resistance of ≤ 10°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the PCB layout and airflow to minimize thermal resistance.
  • The recommended gate drive voltage for the IRF540NPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • No, the IRF540NPBF is not suitable for linear amplifier applications due to its high power MOSFET characteristics. It's designed for switching applications only.

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IRF540NPBF Overview

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Part Image IRF540NPBF International Rectifier

Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image RFP2N10 Harris Semiconductor

Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF540N Motorola Semiconductor Products

Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF512 Motorola Semiconductor Products

Power Field-Effect Transistor, 3.5A I(D), 100V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF540N Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

For a full list of alternate parts for IRF540NPBF, check out Findchips.com