- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IRF540PBF-BE3
- Part Number IRF540PBF-BE3
- Manufacturer Vishay
- Pin Count 3
- Part Category MOSFET (N-Channel)
- Package Category Transistor Outline, Vertical
- Footprint Name Transistor Outline, Vertical - TO-220-1
- Released Date Feb 26, 2022
- Last Modified Date Dec 2, 2023 6:29 AM UTC
- Pinout / Pin List Click Here (Member Only)
IRF540PBF-BE3 Details
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Manufacturer Part Number:
IRF540PBF-BE3
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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Country Of Origin:
Israel
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ECCN Code:
EAR99
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Manufacturer:
Vishay Intertechnologies
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YTEOL:
5
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
230 mJ
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
100 V
IRF540PBF-BE3 Frequently Asked Questions (FAQs)
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The maximum safe operating area (SOA) for the IRF540PBF-BE3 is typically defined by the manufacturer as the region where the device can operate safely without damage. According to the datasheet, the maximum drain-source voltage (Vds) is 100V, and the maximum drain current (Id) is 28A. However, the SOA curve provided in the datasheet shows that the device can operate safely up to 50V and 20A.
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To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. The IRF540PBF-BE3 has a thermal resistance (RthJA) of 62°C/W. A heat sink with a thermal resistance of 10°C/W or lower is recommended. Additionally, ensure good thermal interface material (TIM) is used between the device and heat sink, and that the PCB is designed with thermal vias to dissipate heat efficiently.
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The recommended gate drive voltage for the IRF540PBF-BE3 is between 10V and 15V. A higher gate drive voltage can reduce the on-state resistance (Rds(on)) and improve switching performance. However, excessive gate voltage can lead to gate oxide damage, so it's essential to follow the recommended gate drive voltage range.
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The IRF540PBF-BE3 is a power MOSFET designed for high-power applications, but it's not optimized for high-frequency switching. The device has a relatively high gate-drain charge (Qgd) and gate-source charge (Qgs), which can lead to increased switching losses at high frequencies. For high-frequency switching applications, a MOSFET with lower Qgd and Qgs values is recommended.
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To protect the IRF540PBF-BE3 from electrostatic discharge (ESD), it's essential to follow proper handling and storage procedures. Use an anti-static wrist strap or mat when handling the device, and store the device in an anti-static bag or container. Additionally, ensure that the PCB and assembly process are designed to minimize ESD risks.
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IRF540PBF-BE3 Overview
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