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IRF540PBF - Vishay

Description: Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB

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PCB Footprints
IRF540PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-125
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3D Models
IRF540PBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-125
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IRF540PBF Details

  • Manufacturer Part Number:

    IRF540PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    40 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    230 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    28 A

  • Drain-source On Resistance-Max:

    0.077 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF540PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF540PBF is -55°C to 175°C.
  • Yes, the IRF540PBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses and thermal management.
  • To ensure proper cooling, provide a heat sink with a thermal resistance of 1°C/W or less, and ensure good thermal contact between the device and the heat sink. Also, consider the PCB layout and airflow around the device.
  • The recommended gate drive voltage for the IRF540PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • No, the IRF540PBF is not suitable for linear amplifier applications due to its high power MOSFET characteristics. It's designed for switching applications only.

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IRF540PBF Overview

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Part Image IRF540 Intersil Corporation

Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF542 Harris Semiconductor

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Part Image BUK455-100A NXP Semiconductors

Power Field-Effect Transistor, 26A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF542 STMicroelectronics

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For a full list of alternate parts for IRF540PBF, check out Findchips.com