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IRF60DM206 - Infineon

Description: Infineon IRF60DM206 N-channel MOSFET, 130 A, 60 V DirectFET, 6+Tab-Pin ME

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IRF60DM206 - Infineon PCB footprint - Other - Other - IRF60DM206-8
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IRF60DM206 - Infineon  - 3D model - Other - IRF60DM206-8
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IRF60DM206 Details

  • Manufacturer Part Number:

    IRF60DM206

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    81 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    130 A

  • Drain-source On Resistance-Max:

    0.0029 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    420 pF

  • JESD-30 Code:

    R-XBCC-N6

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -50 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    96 W

  • Pulsed Drain Current-Max (IDM):

    530 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF60DM206 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF60DM206 is -40°C to 150°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The maximum voltage rating for the IRF60DM206 is 600V.
  • Use a voltage regulator or a voltage clamp to prevent overvoltage. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The recommended gate drive voltage for the IRF60DM206 is 10-15V.

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