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IRF630STRLPBF - Vishay

Description: N-Channel 200 V 9A (Tc) 3W (Ta), 74W (Tc) Surface Mount TO-263 (D2PAK)

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IRF630STRLPBF - Vishay PCB footprint - Other - Other - IRF630STRLPBF-2
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IRF630STRLPBF Details

  • Manufacturer Part Number:

    IRF630STRLPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.97

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    250 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    74 W

  • Pulsed Drain Current-Max (IDM):

    36 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF630STRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF630STRLPBF is -55°C to 175°C.
  • Yes, the IRF630STRLPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
  • The maximum current rating for the IRF630STRLPBF is 12A.
  • No, the IRF630STRLPBF is not a radiation-hardened device. It is not designed for use in high-radiation environments.
  • The typical turn-on time for the IRF630STRLPBF is 10ns, and the typical turn-off time is 20ns.

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IRF630STRLPBF Overview

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Part Image IRF630SPBF International Rectifier

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Part Image IRF630STRLPBF International Rectifier

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Part Image IRF630S Motorola Semiconductor Products

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF630STRL Vishay Intertechnologies

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for IRF630STRLPBF, check out Findchips.com