IRF63 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IRF630FP STMicroelectronics	1	N-channel 200 V, 0.29 Î© typ., 9 A, STripFETâ¢ Power MOSFET in a TOâ220FP package	Transistor Outline, Vertical	IRF630FP	3D model available Symbol and footprint available 3	1 Download Model
	IRF630NPBF Infineon	1	IRF630NPBF N-Channel MOSFET, 9.3 A, 200 V HEXFET, 3-Pin TO-220AB Infineon	Transistor Outline, Vertical	IRF630NPBF	3D model available Symbol and footprint available 3	1 Download Model
	IRF630 STMicroelectronics	1	N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package	Transistor Outline, Vertical	IRF630	3D model available Symbol and footprint available 3	1 Download Model
	IRF630STRLPBF Vishay	1	N-Channel 200 V 9A (Tc) 3W (Ta), 74W (Tc) Surface Mount TO-263 (D2PAK)	Other	IRF630STRLPBF	3D model not available Symbol and footprint available 2	1 Download Model

	IRF634PBF Vishay	1	IRF634PBF	Transistor Outline, Vertical	IRF634PBF	3D model available Symbol and footprint available 3	1 Download Model
	IRF631 Texas Instruments	1	IRF631		IRF631	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF630CF Texas Instruments	1	IRF630CF		IRF630CF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF633 Texas Instruments	1	IRF633		IRF633	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF632 Samsung Semiconductor	1	Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRF632	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF632-012PBF International Rectifier	1	Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRF632-012PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF634STRRPBF Vishay Intertechnologies	1	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRF634STRRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF630SPBF Vishay Intertechnologies	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRF630SPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF630 Comset Semiconductor	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRF630	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF634-004 International Rectifier	1	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRF634-004	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF632-002 International Rectifier	1	Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRF632-002	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRF630 Vishay Siliconix	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRF630	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF630-010 International Rectifier	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRF630-010	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF632-013 Infineon Technologies AG	1	Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRF632-013	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF632-011PBF International Rectifier	1	Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRF632-011PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF630-002 International Rectifier	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRF630-002	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF634NL International Rectifier	1	Power Field-Effect Transistor, 8A I(D), 250V, 0.435ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA		IRF634NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF630 Inchange Semiconductor Company Ltd	1	Transistor		IRF630	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF635-004PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRF635-004PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF632-003 Infineon Technologies AG	1	Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRF632-003	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF632-003PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRF632-003PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
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