Part Image

IRF640B - Rochester Electronics

Description: 200V - 0.15Ω - 18A TO-220/TO-220FP, 200V N-Channel MOSFET

Download IRF640B Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRF640B - Rochester Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220
click to zoom
3D Models
IRF640B - Rochester Electronics  - 3D model - Transistor Outline, Vertical - TO-220
click to zoom

IRF640B Details

  • Manufacturer Part Number:

    IRF640B

  • Pbfree Code:

    No

  • Rohs Code:

    No

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • Reach Compliance Code:

    Unknown

  • Manufacturer:

    Rochester Electronics LLC

  • Avalanche Energy Rating (Eas):

    250 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    NOT SPECIFIED

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Qualification Status:

    COMMERCIAL

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRF640B Overview

Use the download button to access the IRF640B schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRF64, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRF640B

Showing 0 results

IRF640B Alternates

Showing results

Image Part Number Model
Part Image IRF640B Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB