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IRF640S - Vishay

Description: MOSFET N-CH 200V 18A D2PAK

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IRF640S - Vishay - PCB symbol
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PCB Footprints
IRF640S - Vishay PCB footprint - Other - Other - D2PAK(TO-263)_4.83H
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IRF640S - Vishay - 3D model - Other - D2PAK(TO-263)_4.83H
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IRF640S Details

  • Manufacturer Part Number:

    IRF640S

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    PLASTIC, D2PAK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    580 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    130 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF640S Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRF640S is not explicitly stated in the datasheet, but it can be determined by consulting Vishay's application note AN1035, which provides SOA curves for the device. The SOA is typically limited by the device's thermal and voltage ratings.
  • The junction-to-case thermal resistance (RθJC) for the IRF640S can be calculated using the thermal resistance values provided in the datasheet. RθJC is typically around 0.5°C/W for the IRF640S. However, it's recommended to consult Vishay's application note AN1043 for a detailed explanation of thermal resistance calculations.
  • The recommended gate drive voltage for the IRF640S is typically between 10V to 15V, depending on the specific application and switching frequency. However, it's essential to ensure that the gate drive voltage does not exceed the maximum gate-source voltage rating of ±20V to prevent damage to the device.
  • Yes, the IRF640S is suitable for high-frequency switching applications up to several hundred kHz. However, it's crucial to consider the device's switching losses, gate charge, and parasitic capacitances when designing the circuit. Additionally, ensure that the device is properly cooled to prevent overheating.
  • To prevent shoot-through current in a half-bridge configuration using the IRF640S, ensure that the dead time between the high-side and low-side switches is sufficient to prevent simultaneous conduction. A dead time of at least 100ns is recommended. Additionally, consider using a gate driver with built-in shoot-through protection or implementing a dedicated shoot-through protection circuit.

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IRF640S Overview

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IRF640S Alternates

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Part Image IRF640STRR International Rectifier

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Part Image IRF640ST4 STMicroelectronics

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Part Image IRF640S Motorola Semiconductor Products

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Part Image IRF640STRL Vishay Intertechnologies

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image IRF640STRR Vishay Intertechnologies

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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