IRF6613TRPBF - Infineon

IRF6613TRPBF Details

• Manufacturer Part Number:

  IRF6613TRPBF

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• ECCN Code:

  EAR99

• Factory Lead Time:

  13 Weeks

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  5.6

• Additional Feature:

  LOW CONDUCTION LOSS

• Avalanche Energy Rating (Eas):

  200 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  40 V

• Drain Current-Max (ID):

  23 A

• Drain-source On Resistance-Max:

  0.0034 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  R-XBCC-N3

• JESD-609 Code:

  e1

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  3

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Package Body Material:

  UNSPECIFIED

• Package Shape:

  RECTANGULAR

• Package Style:

  CHIP CARRIER

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  89 W

• Pulsed Drain Current-Max (IDM):

  180 A

• Qualification Status:

  Not Qualified

• Surface Mount:

  YES

• Terminal Finish:

  Tin/Silver/Copper (Sn/Ag/Cu)

• Terminal Form:

  NO LEAD

• Terminal Position:

  BOTTOM

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON