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IRF6715MTRPBF - Infineon

Description: MOSFET 25V 1 N-CH HEXFET 1.6mOhms 40nC

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IRF6715MTRPBF - Infineon PCB footprint - Other - Other - IRF6715MTRPBF-3
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IRF6715MTRPBF - Infineon  - 3D model - Other - IRF6715MTRPBF-3
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IRF6715MTRPBF Details

  • Manufacturer Part Number:

    IRF6715MTRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    180 A

  • Drain-source On Resistance-Max:

    0.0016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    600 pF

  • JESD-30 Code:

    R-XBCC-N3

  • JESD-609 Code:

    e1

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    78 W

  • Pulsed Drain Current-Max (IDM):

    270 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF6715MTRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF6715MTRPBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRF6715MTRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF6715MTRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in anti-static packaging.
  • The maximum allowable power dissipation for the IRF6715MTRPBF is 150W, but this can be affected by factors such as ambient temperature, thermal resistance, and airflow.

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IRF6715MTRPBF Overview

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