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IRF710PBF - Vishay

Description: N-Channel 400V 2A (Tc) 36W (Tc) Through Hole TO-220

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PCB Footprints
IRF710PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1
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IRF710PBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1
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IRF710PBF Details

  • Manufacturer Part Number:

    IRF710PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.8

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    3.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    36 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF710PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF710PBF is -55°C to 175°C.
  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
  • The maximum allowable voltage for the IRF710PBF is 200V.
  • Handle the device with ESD-protective equipment, use an ESD wrist strap, and follow proper ESD handling procedures to prevent damage.
  • Yes, the IRF710PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and component selection to minimize parasitic inductance and capacitance.

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Part Image IRF710 Vishay Intertechnologies

Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB