Part Image

IRF7205TRPBF - Infineon

Description: MOSFET MOSFT PCh -30V -4.6A 70mOhm 27nC

Download IRF7205TRPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRF7205TRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
click to zoom
3D Models
IRF7205TRPBF - Infineon  - 3D model - Small Outline Packages - SO-8
click to zoom

IRF7205TRPBF Details

  • Manufacturer Part Number:

    IRF7205TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.32

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4.6 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7205TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7205TRPBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRF7205TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF7205TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in anti-static packaging.
  • The maximum allowable power dissipation for the IRF7205TRPBF is 150W, but this can be increased with proper heat sinking and thermal management.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRF7205TRPBF Overview

Use the download button to access the IRF7205TRPBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRF72, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRF7205TRPBF

Showing 0 results

IRF7205TRPBF Alternates

Showing results

Image Part Number Model
Part Image IRF7205PBF International Rectifier

Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7205TR International Rectifier

Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRF7205PBF Infineon Technologies AG

Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA