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IRF730APBF-BE3 - Vishay

Description: N-Channel 400 V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB

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PCB Footprints
IRF730APBF-BE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB (High Voltage)
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3D Models
IRF730APBF-BE3 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220AB (High Voltage)
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IRF730APBF-BE3 Details

  • Manufacturer Part Number:

    IRF730APBF-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    290 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    5.5 A

  • Drain-source On Resistance-Max:

    1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    74 W

  • Pulsed Drain Current-Max (IDM):

    22 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF730APBF-BE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF730APBF-BE3 is -55°C to 175°C.
  • Yes, the IRF730APBF-BE3 is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
  • The maximum drain-source voltage rating for the IRF730APBF-BE3 is 30V.
  • No, the IRF730APBF-BE3 is not a radiation-hardened device. It is not designed to withstand high levels of radiation.
  • The typical turn-on and turn-off time for the IRF730APBF-BE3 is around 10-20 ns, depending on the specific application and operating conditions.

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