Part Image

IRF730PBF - Vishay

Description: MOSFET N-ch HEXFET 5.5A 400V 1R TO220AB

Download IRF730PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRF730PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1_2
click to zoom
3D Models
IRF730PBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1_2
click to zoom

IRF730PBF Details

  • Manufacturer Part Number:

    IRF730PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.9

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    290 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    5.5 A

  • Drain-source On Resistance-Max:

    1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    74 W

  • Pulsed Drain Current-Max (IDM):

    22 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF730PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF730PBF is -55°C to 175°C.
  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
  • The maximum allowable voltage for the IRF730PBF is 400V.
  • Yes, the IRF730PBF is suitable for high-frequency switching applications up to 1MHz, but ensure proper PCB layout and component selection to minimize parasitic inductance and capacitance.
  • Handle the IRF730PBF with ESD-protective equipment, wear an ESD strap, and ensure the PCB is designed with ESD protection in mind.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRF730PBF Overview

Use the download button to access the IRF730PBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRF73, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRF730PBF

Showing 0 results

IRF730PBF Alternates

Showing results

Image Part Number Model
Part Image IRF730 Philips Semiconductors

Power Field-Effect Transistor, 5.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Part Image MTP5N40E Semiconductor Technology Inc

Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Part Image IRF730 TT Electronics Resistors

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF730 NXP Semiconductors

Power Field-Effect Transistor, 7.2A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF730 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

For a full list of alternate parts for IRF730PBF, check out Findchips.com