- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IRF7313TRPBFXTMA1
- Part Number IRF7313TRPBFXTMA1
- Manufacturer Infineon
- Pin Count 8
- Part Category MOSFET (N-Channel)
- Package Category Small Outline Packages
- Footprint Name Small Outline Packages - SO-8 Package Outline
- Released Date Apr 9, 2024
- Last Modified Date Apr 9, 2024 2:57 AM UTC
- Pinout / Pin List Click Here (Member Only)
IRF7313TRPBFXTMA1 Details
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Manufacturer Part Number:
IRF7313TRPBFXTMA1
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Part Life Cycle Code:
Active
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Package Description:
SOP-8
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ECCN Code:
EAR99
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Factory Lead Time:
18 Weeks
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Manufacturer:
Infineon Technologies AG
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YTEOL:
5.4
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
82 mJ
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Configuration:
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
30 V
IRF7313TRPBFXTMA1 Frequently Asked Questions (FAQs)
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The recommended PCB footprint for the IRF7313TRPBFXTMA1 can be found in the Infineon application note AN2013-01, which provides a detailed layout and footprint recommendation for optimal thermal performance and reliability.
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To ensure proper cooling, follow the thermal design guidelines in the datasheet and application notes. Use a thermal pad or heat sink with a thermal interface material, and ensure good airflow around the device. The maximum junction temperature (Tj) should not exceed 150°C.
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The IRF7313TRPBFXTMA1 can withstand voltage spikes up to 1.5 times the maximum rated voltage (Vds) for a short duration (typically < 1 ms). However, it's recommended to use a TVS diode or other protection circuitry to prevent damage from voltage transients.
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Yes, the IRF7313TRPBFXTMA1 is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the gate drive circuitry is properly designed to minimize ringing and overshoot, and that the device is properly cooled to prevent thermal issues.
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The gate resistor value depends on the specific application and gate drive circuitry. A general guideline is to use a value between 10 Ω to 100 Ω. A higher value can help reduce power consumption, but may increase switching times. Consult the application notes and gate drive circuitry datasheets for more information.
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