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IRF7329TRPBF - Infineon

Description: MOSFET MOSFT DUAL PCh -12V 9.2A

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IRF7329TRPBF - Infineon - PCB symbol
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PCB Footprints
IRF7329TRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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IRF7329TRPBF - Infineon - 3D model - Small Outline Packages - SO-8
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IRF7329TRPBF Details

  • Manufacturer Part Number:

    IRF7329TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SO-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    9.2 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7329TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7329TRPBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRF7329TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF7329TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in anti-static packaging.
  • The maximum allowable power dissipation for the IRF7329TRPBF is 150W, but this can be increased with proper heat sinking and thermal management.

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IRF7329TRPBF Overview

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IRF7329TRPBF Alternates

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Part Image IRF7329 Infineon Technologies AG

Small Signal Field-Effect Transistor, 9.2A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET