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IRF7341GTRPBF - Infineon

Description: Mosfet Array 55V 4.7A 2W Surface Mount 8-SO

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IRF7341GTRPBF - Infineon - PCB symbol
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IRF7341GTRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8_2025
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IRF7341GTRPBF - Infineon - 3D model - Small Outline Packages - SO-8_2025
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IRF7341GTRPBF Details

  • Manufacturer Part Number:

    IRF7341GTRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    5.1 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    42 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7341GTRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7341GTRPBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRF7341GTRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF7341GTRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-safe environment.
  • The maximum allowable power dissipation for the IRF7341GTRPBF is 150W, but this value can be derated based on the operating temperature and other factors.

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IRF7341GTRPBF Overview

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IRF7341GTRPBF Alternates

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Image Part Number Model
Part Image AUIRF7341QTR Infineon Technologies AG

Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image IRF7341TRPBF International Rectifier

Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image IRF7341PBF International Rectifier

Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image AUIRF7341QTR International Rectifier

Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image IRF7341QTRPBF International Rectifier

Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
For a full list of alternate parts for IRF7341GTRPBF, check out Findchips.com