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IRF7341 - Infineon

Description: N-channel MOSFET,IRF7341 4.7A 55V

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IRF7341 Details

  • Manufacturer Part Number:

    IRF7341

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    4

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    5.1 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    42 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7341 Frequently Asked Questions (FAQs)

  • The maximum operating junction temperature of the IRF7341 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper biasing, make sure to provide a stable voltage supply to the gate driver, and ensure the input voltage (VCC) is within the recommended range of 10V to 20V. Additionally, ensure the bootstrap capacitor is properly sized and placed close to the IC to minimize noise and voltage drops.
  • To minimize EMI and noise, follow these guidelines: keep the PCB layout compact, use a solid ground plane, and place the IRF7341 close to the power MOSFETs. Use short, wide traces for the high-current paths, and avoid vias and sharp corners. Also, consider adding a shield or screen to the PCB to reduce radiated emissions.
  • While it's possible to use the IRF7341 with a different power MOSFET, it's essential to ensure the MOSFET's characteristics (e.g., threshold voltage, gate charge, and drain-source resistance) are compatible with the IRF7341's output characteristics. Consult the datasheet and application notes for guidance on selecting a suitable power MOSFET.
  • To troubleshoot issues with the IRF7341, start by verifying the power supply voltage, input signals, and PCB layout. Check for proper decoupling, and ensure the bootstrap capacitor is properly sized and placed. Use an oscilloscope to monitor the gate-source voltage, drain-source voltage, and input signals. Consult the datasheet and application notes for troubleshooting guidelines and common pitfalls to avoid.

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IRF7341 Overview

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Part Image IRF7341TRPBF Infineon Technologies AG

Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

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Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

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Part Image IRF7341QPBF International Rectifier

Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7341IPBF International Rectifier

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For a full list of alternate parts for IRF7341, check out Findchips.com