IRF7341TRPBFXTMA1 - Infineon

IRF7341TRPBFXTMA1 Details

• Manufacturer Part Number:

  IRF7341TRPBFXTMA1

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• ECCN Code:

  EAR99

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  5

• Avalanche Energy Rating (Eas):

  72 mJ

• Configuration:

  SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  55 V

• Drain Current-Max (ID):

  4.7 A

• Drain-source On Resistance-Max:

  0.05 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  71 pF

• JEDEC-95 Code:

  MS-012AA

• JESD-30 Code:

  R-PDSO-G8

• Moisture Sensitivity Level:

  1

• Number of Elements:

  2

• Number of Terminals:

  8

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  2 W

• Pulsed Drain Current-Max (IDM):

  38 A

• Surface Mount:

  YES

• Terminal Form:

  GULL WING

• Terminal Position:

  DUAL

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON

• Turn-off Time-Max (toff):

  68 ns

• Turn-on Time-Max (ton):

  16.8 ns