Part Image

IRF7389PBF - Infineon

Description: INFINEON - IRF7389PBF - MOSFET, DUAL, NP, LOGIC, SO-8

Download IRF7389PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRF7389PBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - 8 Lead SOIC-ren1
click to zoom
3D Models
IRF7389PBF - Infineon  - 3D model - Small Outline Packages - 8 Lead SOIC-ren1
click to zoom

IRF7389PBF Details

  • Manufacturer Part Number:

    IRF7389PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    82 mJ

  • Configuration:

    COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    7.3 A

  • Drain-source On Resistance-Max:

    0.029 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7389PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7389PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRF7389PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF7389PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper thermal management and follow the recommended gate drive voltage.
  • Handle the device with anti-static precautions, use an ESD wrist strap or mat, and ensure the device is stored in an anti-static package.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRF7389PBF Overview

Use the download button to access the IRF7389PBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRF73, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRF7389PBF

Showing 0 results

IRF7389PBF Alternates

Showing results

Image Part Number Model
Part Image IRF7389TRPBF International Rectifier

Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7389 International Rectifier

Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7389TR Infineon Technologies AG

Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7389 Infineon Technologies AG

Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7389TR International Rectifier

Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

For a full list of alternate parts for IRF7389PBF, check out Findchips.com