Part Image

IRF740 - Vishay

Description: Vishay IRF740 N-channel MOSFET Transistor, 10 A, 400 V, 3-Pin TO-220AB

Download IRF740 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRF740 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1
click to zoom
3D Models
IRF740 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1
click to zoom

IRF740 Details

  • Manufacturer Part Number:

    IRF740

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220AB, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    520 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.55 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF740 Frequently Asked Questions (FAQs)

  • The IRF740 can operate safely between -55°C to 175°C, but the maximum junction temperature (TJ) should not exceed 175°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of 1°C/W or less, and ensuring good airflow around the device.
  • The maximum voltage that can be applied to the gate of the IRF740 is ±20V, but it's recommended to keep it between -5V to +15V for reliable operation.
  • Yes, the IRF740 can be used as a switch in high-frequency applications, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure proper layout and decoupling to minimize ringing and oscillations.
  • To protect the IRF740 from ESD, handle the device by the body, use an anti-static wrist strap or mat, and ensure the workspace is ESD-safe. Also, use ESD-sensitive handling and storage procedures.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRF740 Overview

Use the download button to access the IRF740 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRF74, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRF740

Showing 0 results

IRF740 Alternates

Showing results

Image Part Number Model
Part Image IRF740PBF Vishay Siliconix

Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF740 Intersil Corporation

Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF740PBF International Rectifier

Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF740 Harris Semiconductor

Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF740 Vishay Siliconix

Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

For a full list of alternate parts for IRF740, check out Findchips.com