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IRF7458PBF - Infineon

Description: IRF7458PBF N-Channel MOSFET Transistor, 14 A, 30 V HEXFET, 8-Pin SOIC Infineon

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IRF7458PBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - 8 Lead SOIC-ren1
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IRF7458PBF - Infineon  - 3D model - Small Outline Packages - 8 Lead SOIC-ren1
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IRF7458PBF Details

  • Manufacturer Part Number:

    IRF7458PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    280 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    110 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7458PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7458PBF is -55°C to 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 125W. Additionally, ensure good airflow around the heat sink to prevent overheating.
  • The recommended gate drive voltage for the IRF7458PBF is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
  • To protect the IRF7458PBF from overvoltage and overcurrent conditions, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) diode to limit the voltage across the device. Additionally, use a current sense resistor and a fuse to detect and respond to overcurrent conditions.
  • The recommended PCB layout and design considerations for the IRF7458PBF include using a multi-layer PCB with a solid ground plane, keeping the high-current paths short and wide, and using a Kelvin connection for the source pin. Additionally, ensure the PCB is designed to minimize electromagnetic interference (EMI) and electromagnetic compatibility (EMC) issues.

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IRF7458PBF Overview

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