IRF7769L1TRPBF - Infineon

IRF7769L1TRPBF Details

• Manufacturer Part Number:

  IRF7769L1TRPBF

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• ECCN Code:

  EAR99

• HTS Code:

  8541.29.00.95

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  5.9

• Avalanche Energy Rating (Eas):

  260 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  375 A

• Drain-source On Resistance-Max:

  0.0035 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  R-XBCC-N3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  9

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  UNSPECIFIED

• Package Shape:

  RECTANGULAR

• Package Style:

  CHIP CARRIER

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation Ambient-Max:

  3.3 W

• Power Dissipation-Max (Abs):

  125 W

• Pulsed Drain Current-Max (IDM):

  500 A

• Surface Mount:

  YES

• Terminal Form:

  NO LEAD

• Terminal Position:

  BOTTOM

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON