IRF7779L2TRPBF - Infineon

IRF7779L2TRPBF Details

• Manufacturer Part Number:

  IRF7779L2TRPBF

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• ECCN Code:

  EAR99

• HTS Code:

  8541.29.00.95

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  6.2

• Avalanche Energy Rating (Eas):

  270 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  150 V

• Drain Current-Max (ID):

  375 A

• Drain-source On Resistance-Max:

  0.011 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  180 pF

• JESD-30 Code:

  R-XBCC-N9

• JESD-609 Code:

  e1

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  9

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  UNSPECIFIED

• Package Shape:

  RECTANGULAR

• Package Style:

  CHIP CARRIER

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation Ambient-Max:

  3.3 W

• Power Dissipation-Max (Abs):

  125 W

• Pulsed Drain Current-Max (IDM):

  270 A

• Qualification Status:

  Not Qualified

• Surface Mount:

  YES

• Terminal Finish:

  Tin/Silver/Copper (Sn/Ag/Cu)

• Terminal Form:

  NO LEAD

• Terminal Position:

  BOTTOM

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON