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IRF7811AVTRPBF - Infineon

Description: INFINEON - IRF7811AVTRPBF - MOSFET, N-CH, 30V, 10.8A, SOIC

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IRF7811AVTRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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IRF7811AVTRPBF - Infineon  - 3D model - Small Outline Packages - SO-8
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IRF7811AVTRPBF Details

  • Manufacturer Part Number:

    IRF7811AVTRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    10.8 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    46 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7811AVTRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7811AVTRPBF is -55°C to 175°C.
  • No, the IRF7811AVTRPBF is not a radiation-hardened device. It is not designed for use in high-radiation environments.
  • Yes, the IRF7811AVTRPBF is AEC-Q101 qualified, making it suitable for use in automotive applications.
  • The maximum power dissipation for the IRF7811AVTRPBF is 125W.
  • Yes, the IRF7811AVTRPBF is a RoHS-compliant device, meaning it meets the European Union's Restriction of Hazardous Substances directive.

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Part Image IRF7811AVTR International Rectifier

Power Field-Effect Transistor, 10.8A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7811AVPBF Infineon Technologies AG

Power Field-Effect Transistor, 10.8A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA