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IRF820 - Vishay

Description: N-channel MOSFET,IRF820 2.5A 500V

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IRF820 - Vishay - PCB symbol
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PCB Footprints
IRF820 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRF820
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IRF820 - Vishay - 3D model - Transistor Outline, Vertical - IRF820
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IRF820 Details

  • Manufacturer Part Number:

    IRF820

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF820 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRF820 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.
  • The junction-to-case thermal resistance (RθJC) for the IRF820 can be calculated using the thermal resistance values provided in the datasheet. RθJC is typically calculated as the sum of the junction-to-lead thermal resistance (RθJL) and the lead-to-case thermal resistance (RθLC). For the IRF820, RθJC is approximately 0.5°C/W.
  • The recommended gate drive voltage for the IRF820 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
  • Yes, the IRF820 is suitable for high-frequency switching applications up to several hundred kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is designed to minimize ringing and oscillations.
  • To handle the IRF820's high peak current capability during switching transients, it's essential to ensure that the device is properly snubbed and that the PCB layout is designed to minimize inductance and ringing. Additionally, consider using a gate driver with a high current capability and a low output impedance to minimize voltage droop during switching.

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IRF820 Overview

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