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IRF840PBF-BE3 - Vishay

Description: VISHAY - IRF840PBF-BE3 - MOSFET, N-CH, 500V, 8A, TO-220AB

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PCB Footprints
IRF840PBF-BE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1
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3D Models
IRF840PBF-BE3 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1
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IRF840PBF-BE3 Details

  • Manufacturer Part Number:

    IRF840PBF-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    510 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.85 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF840PBF-BE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IRF840PBF-BE3 is 175°C.
  • The IRF840PBF-BE3 is a standard MOSFET, not a logic-level MOSFET. It requires a higher gate-source voltage to turn on.
  • While the IRF840PBF-BE3 can be used in switching applications, it's not ideal for high-frequency switching due to its relatively high gate charge and switching losses. A more suitable MOSFET for high-frequency switching would be a device with lower gate charge and switching losses.
  • To ensure the IRF840PBF-BE3 is fully turned on, you should apply a gate-source voltage (Vgs) of at least 10V, and ideally 12V or more, depending on the specific application requirements.
  • The maximum continuous drain current (Id) of the IRF840PBF-BE3 is 8A, but this can be affected by the operating temperature and other factors. Always check the datasheet and application notes for specific guidance.

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