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IRF8736TRPBF - Infineon

Description: Infineon IRF8736TRPBF N-channel MOSFET, 18 A, 30 V HEXFET, 8-Pin SOIC

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IRF8736TRPBF Details

  • Manufacturer Part Number:

    IRF8736TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    LEAD FREE, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    126 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.0048 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    144 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF8736TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF8736TRPBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and monitoring junction temperature.
  • The recommended gate drive voltage for the IRF8736TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF8736TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-shielding bag or tube.
  • The maximum allowable power dissipation for the IRF8736TRPBF is dependent on the thermal resistance of the device and the ambient temperature. Refer to the datasheet for specific power dissipation calculations.

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IRF8736TRPBF Alternates

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Part Image IRF8736PBF International Rectifier

Power Field-Effect Transistor, 18A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image IRF8736TRPBF-1 Infineon Technologies AG

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For a full list of alternate parts for IRF8736TRPBF, check out Findchips.com