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IRF8788PBF - Infineon

Description: Infineon IRF8788PBF N-channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC

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IRF8788PBF - Infineon - PCB symbol
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PCB Footprints
IRF8788PBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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IRF8788PBF - Infineon - 3D model - Small Outline Packages - SO-8
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IRF8788PBF Details

  • Manufacturer Part Number:

    IRF8788PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    230 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.0028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    190 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF8788PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF8788PBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRF8788PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF8788PBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-safe environment.
  • The maximum allowable power dissipation for the IRF8788PBF is 150W, but this value can be derated based on the operating temperature and other factors.

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