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IRF9389TRPBF - Infineon

Description: INFINEON - IRF9389TRPBF - MOSFET, DUAL N & P-CH, 30V, 6.8A, SOIC-8

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Symbol
IRF9389TRPBF - Infineon - PCB symbol
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PCB Footprints
IRF9389TRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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3D Models
IRF9389TRPBF - Infineon - 3D model - Small Outline Packages - SO-8
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IRF9389TRPBF Details

  • Manufacturer Part Number:

    IRF9389TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6.8 A

  • Drain-source On Resistance-Max:

    0.027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    34 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF9389TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF9389TRPBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRF9389TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF9389TRPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the device with ESD-protective equipment, use an ESD wrist strap, and ensure the device is stored in an ESD-protective package to prevent damage.

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