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IRF9510PBF - Vishay

Description: Trans MOSFET P-CH 100V 4A 3-Pin(3+Tab) TO-220AB

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IRF9510PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - LV8712T-TLM-H
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3D Models
IRF9510PBF - Vishay  - 3D model - Transistor Outline, Vertical - LV8712T-TLM-H
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IRF9510PBF Details

  • Manufacturer Part Number:

    IRF9510PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    1.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    43 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF9510PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF9510PBF is -55°C to 175°C.
  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
  • The recommended gate drive voltage for the IRF9510PBF is between 10V to 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF9510PBF is suitable for switching regulator applications due to its low RDS(on) and high switching frequency capability.
  • Handle the device by the body, use an anti-static wrist strap or mat, and ensure the PCB is designed with ESD protection in mind.

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IRF9510PBF Overview

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IRF9510PBF Alternates

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Image Part Number Model
Part Image IRF9510 Rochester Electronics LLC

3A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Image IRF9510 Intersil Corporation

Power Field-Effect Transistor, 3A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF9510 Vishay Siliconix

Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF9510 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF9510 Vishay Intertechnologies

Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

For a full list of alternate parts for IRF9510PBF, check out Findchips.com