- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IRF9520
- Part Number IRF9520
- Manufacturer Vishay
- Pin Count 3
- Part Category MOSFET (P-Channel)
- Package Category Transistor Outline, Vertical
- Footprint Name Transistor Outline, Vertical - TO-220-1
- Released Date Jul 13, 2021
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
IRF9520 Details
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Manufacturer Part Number:
IRF9520
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Part Life Cycle Code:
Obsolete
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Package Description:
TO-220, 3 PIN
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ECCN Code:
EAR99
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Manufacturer:
Vishay Intertechnologies
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YTEOL:
0
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
300 mJ
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Case Connection:
ISOLATED
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
100 V
IRF9520 Frequently Asked Questions (FAQs)
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The maximum safe operating area (SOA) for the IRF9520 is not explicitly stated in the datasheet, but it can be determined by consulting the SOA curves provided in the application notes or by contacting Vishay's technical support. Generally, the SOA is limited by the device's voltage and current ratings, as well as its thermal characteristics.
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To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) such as thermal paste or thermal tape, and ensuring that the heat sink is properly attached to the device. The PCB should also be designed to dissipate heat efficiently, with thermal vias and a sufficient copper area.
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The recommended gate drive voltage for the IRF9520 is typically between 10V to 15V, depending on the specific application and the desired switching performance. However, it's essential to ensure that the gate drive voltage does not exceed the maximum rated gate-source voltage (Vgs) of ±20V to prevent damage to the device.
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The IRF9520 is a power MOSFET designed for high-power applications, but it may not be suitable for high-frequency switching applications due to its relatively high gate charge (Qg) and output capacitance (Coss). For high-frequency applications, a MOSFET with lower Qg and Coss may be more suitable. However, the IRF9520 can still be used in high-frequency applications with proper design and layout considerations, such as minimizing parasitic inductance and capacitance.
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To protect the IRF9520 from ESD, it's essential to handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and storing the device in an ESD-safe environment. The device should also be protected during assembly and testing, using ESD-safe equipment and materials. Additionally, the PCB design should include ESD protection components, such as TVS diodes or ESD protection arrays, to prevent ESD damage to the device.
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IRF9520 Overview
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