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IRF9540NS - Infineon

Description: INFINEON - IRF9540NS - Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-263 (D2PAK), Surface Mount

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IRF9540NS - Infineon PCB footprint - Other - Other - IRF9540NS-1
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IRF9540NS Details

  • Manufacturer Part Number:

    IRF9540NS

  • Part Life Cycle Code:

    Active

  • Package Description:

    D2PAK-3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.6

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    430 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    23 A

  • Drain-source On Resistance-Max:

    0.117 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    94 W

  • Pulsed Drain Current-Max (IDM):

    76 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF9540NS Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF9540NS is -55°C to 175°C.
  • To ensure proper thermal management, ensure a good thermal interface between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1°C/W.
  • The recommended gate drive voltage for the IRF9540NS is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF9540NS from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in an anti-static bag or container.
  • The maximum allowable current for the IRF9540NS is 23A, with a maximum pulsed current of 69A.

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IRF9540NS Overview

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