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IRF9610 - Vishay

Description: MOSFET RECOMMENDED ALT 844-IRF9610PBF

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PCB Footprints
IRF9610 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1
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3D Models
IRF9610 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1
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IRF9610 Details

  • Manufacturer Part Number:

    IRF9610

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    1.8 A

  • Drain-source On Resistance-Max:

    3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    20 W

  • Pulsed Drain Current-Max (IDM):

    7 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF9610 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRF9610 is not explicitly stated in the datasheet. However, it can be determined by consulting the SOA curves provided in the datasheet, which show the maximum allowable voltage and current combinations for the device.
  • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material, such as thermal paste or thermal tape, and ensuring that the heat sink is properly attached to the device. Additionally, the PCB should be designed to dissipate heat efficiently, and the device should be operated within its recommended temperature range.
  • The recommended gate drive voltage for the IRF9610 is typically between 10V to 15V, depending on the specific application and required switching speed. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage and switching speed requirements.
  • Yes, the IRF9610 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application is designed to minimize switching losses and electromagnetic interference (EMI). Additionally, the device's maximum operating frequency should not exceed 1MHz.
  • To protect the IRF9610 from overvoltage and overcurrent conditions, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions. It's also essential to design the application to operate within the device's recommended voltage and current ratings.

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IRF9610 Overview

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Part Image IRF9610PBF Vishay Intertechnologies

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB