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Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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IRF634A
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF634A |
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IRF634A
Samsung Semiconductor
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1 | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF634A |
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IRF634AJ69Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF634AJ69Z |
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