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IRF9Z14PBF - Vishay

Description: Power MOSFET

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PCB Footprints
IRF9Z14PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1_1
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3D Models
IRF9Z14PBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1_1
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IRF9Z14PBF Details

  • Manufacturer Part Number:

    IRF9Z14PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.1

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    6.7 A

  • Drain-source On Resistance-Max:

    0.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    31 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    43 W

  • Pulsed Drain Current-Max (IDM):

    27 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF9Z14PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF9Z14PBF is -55°C to 175°C.
  • The IRF9Z14PBF is a standard MOSFET, not a logic-level MOSFET. It requires a higher gate-source voltage to turn on.
  • The maximum safe operating area (SOA) for the IRF9Z14PBF is not explicitly stated in the datasheet, but it can be determined by consulting the SOA curves provided in the datasheet.
  • Yes, the IRF9Z14PBF can be used in high-frequency switching applications due to its low gate charge and fast switching times.
  • Yes, the IRF9Z14PBF is qualified to AEC-Q101 standards, making it suitable for use in automotive applications.

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IRF9Z14PBF Overview

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Part Image IRF9Z14 International Rectifier

Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF9Z14PBF International Rectifier

Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB