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IRF9Z30PBF - Vishay

Description: MOSFET 60V P-CH HEXFET MOSFET

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PCB Footprints
IRF9Z30PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1
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IRF9Z30PBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1
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IRF9Z30PBF Details

  • Manufacturer Part Number:

    IRF9Z30PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.1

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    50 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.14 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    140 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    74 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    128 ns

  • Turn-on Time-Max (ton):

    188 ns

IRF9Z30PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF9Z30PBF is -55°C to 175°C.
  • Yes, the IRF9Z30PBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
  • The maximum current rating for the IRF9Z30PBF is 9A.
  • Yes, the IRF9Z30PBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • The IRF9Z30PBF comes in a TO-220AB package.

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IRF9Z30PBF Overview

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Part Image IRF9Z30PBF Vishay Siliconix

Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF9Z30PBF International Rectifier

Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF9Z30 International Rectifier

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Part Image IRF9Z30 Vishay Siliconix

Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF9Z30 Vishay Intertechnologies

Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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