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IRFB3006GPBF - Infineon

Description: Infineon IRFB3006GPBF N-channel MOSFET, 270 A, 60 V HEXFET, 3-Pin TO-220AB

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IRFB3006GPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB HEIGHT 4.83
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3D Models
IRFB3006GPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB HEIGHT 4.83
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IRFB3006GPBF Details

  • Manufacturer Part Number:

    IRFB3006GPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    320 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    195 A

  • Drain-source On Resistance-Max:

    0.0025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Pulsed Drain Current-Max (IDM):

    1080 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFB3006GPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFB3006GPBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRFB3006GPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFB3006GPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper layout and decoupling to minimize parasitic inductance and capacitance.
  • Use a suitable voltage regulator and overcurrent protection circuitry, such as a fuse or current-sensing resistor, to prevent damage from overvoltage and overcurrent conditions.

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