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IRFB3006GPBF - Infineon

Description: Infineon IRFB3006GPBF N-channel MOSFET, 270 A, 60 V HEXFET, 3-Pin TO-220AB

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IRFB3006GPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB HEIGHT 4.83
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3D Models
IRFB3006GPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB HEIGHT 4.83
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IRFB3006GPBF Details

  • Manufacturer Part Number:

    IRFB3006GPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Similar Group:

    TR0810021002YYYY10059067

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    320 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    195 A

  • Drain-source On Resistance-Max:

    0.0025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Pulsed Drain Current-Max (IDM):

    1080 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFB3006GPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFB3006GPBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRFB3006GPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFB3006GPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper layout and decoupling to minimize parasitic inductance and capacitance.
  • Use a suitable voltage regulator and overcurrent protection circuitry, such as a fuse or current-sensing resistor, to prevent damage from overvoltage and overcurrent conditions.

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About Infineon

Infineon Technologies develops semiconductor products for power conversion, control, sensing, connectivity, and security. Its portfolio includes power transistors, gate drivers, microcontrollers, sensors, communication devices, and supporting software. Power semiconductor technologies span silicon, silicon carbide, and gallium nitride, providing options for different switching, voltage, and efficiency requirements.

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