Part Image

IRFB3607PBF - Infineon

Description: MOSFET N-Channel 75V 80A HEXFET TO220AB Infineon IRFB3607PBF N-channel MOSFET Transistor, 80 A, 75 V, 3-Pin TO-220AB

Download IRFB3607PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFB3607PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220AB_3
click to zoom
3D Models
IRFB3607PBF - Infineon  - 3D model - Transistor Outline, Vertical - TO220AB_3
click to zoom

IRFB3607PBF Details

  • Manufacturer Part Number:

    IRFB3607PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    53 Weeks, 1 Day

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.009 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    140 W

  • Pulsed Drain Current-Max (IDM):

    310 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFB3607PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFB3607PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRFB3607PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFB3607PBF is suitable for switching applications due to its low RDS(on) and high switching speed. However, ensure proper gate drive and layout to minimize switching losses.
  • Use a suitable voltage regulator and overcurrent protection circuitry to prevent damage from overvoltage and overcurrent conditions.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFB3607PBF Overview

Use the download button to access the IRFB3607PBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFB3, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFB3607PBF

Showing 0 results