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IRFBC30ALPBF - Vishay

Description: MOSFET 600V N-CH HEXFET TO-26

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PCB Footprints
IRFBC30ALPBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I2PAK (TO-262) (HIGH VOLTAGE)
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3D Models
IRFBC30ALPBF - Vishay  - 3D model - Transistor Outline, Vertical - I2PAK (TO-262) (HIGH VOLTAGE)
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IRFBC30ALPBF Details

  • Manufacturer Part Number:

    IRFBC30ALPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-262AA

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.8

  • Avalanche Energy Rating (Eas):

    290 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    3.6 A

  • Drain-source On Resistance-Max:

    2.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    74 W

  • Pulsed Drain Current-Max (IDM):

    14 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFBC30ALPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFBC30ALPBF is -55°C to 175°C.
  • The IRFBC30ALPBF is a logic-level MOSFET, which means it can be driven directly by a microcontroller or other low-voltage logic device.
  • The maximum current rating for the IRFBC30ALPBF is 30A, with a pulsed current rating of 60A.
  • Yes, the IRFBC30ALPBF is suitable for high-frequency switching applications, with a switching frequency rating of up to 1MHz.
  • The typical turn-on time for the IRFBC30ALPBF is 10ns, and the typical turn-off time is 20ns.

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IRFBC30ALPBF Overview

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Part Image IRFBC30ALPBF International Rectifier

Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

Part Image IRFBC30ALPBF Vishay Siliconix

Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA