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IRFD120PBF - Vishay

Description: MOSFET N-Channel 100V 1.3A HVMDIP4 Vishay IRFD120PBF N-channel MOSFET Transistor, 1.3 A, 100 V, 4-Pin HVMDIP

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PCB Footprints
IRFD120PBF - Vishay PCB footprint - Dual-In-Line Packages - Dual-In-Line Packages - VISHAY-HVM-DIP_1
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3D Models
IRFD120PBF - Vishay  - 3D model - Dual-In-Line Packages - VISHAY-HVM-DIP_1
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IRFD120PBF Details

  • Manufacturer Part Number:

    IRFD120PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1.3 A

  • Drain-source On Resistance-Max:

    0.27 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDIP-T4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1.3 W

  • Power Dissipation-Max (Abs):

    1.3 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFD120PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFD120PBF is -55°C to 175°C.
  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
  • The maximum allowable voltage for the IRFD120PBF is 100V.
  • Handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container to prevent ESD damage.
  • Store the IRFD120PBF in a dry, cool place, away from direct sunlight, and avoid exposing it to moisture or extreme temperatures.

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IRFD120PBF Overview

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Part Image IRFD120 Vishay Siliconix

Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-250AA

Part Image IRFD120PBF Vishay Siliconix

Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET