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IRFD420PBF - Vishay

Description: Vishay IRFD420PBF N-channel MOSFET Transistor, 0.37 A, 500 V, 4-Pin HVMDIP

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IRFD420PBF - Vishay PCB footprint - Dual-In-Line Packages - Dual-In-Line Packages - HVM DIP
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IRFD420PBF - Vishay  - 3D model - Dual-In-Line Packages - HVM DIP
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IRFD420PBF Details

  • Manufacturer Part Number:

    IRFD420PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DIP

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    51 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    0.37 A

  • Drain-source On Resistance-Max:

    3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1 W

  • Power Dissipation-Max (Abs):

    1 W

  • Pulsed Drain Current-Max (IDM):

    3 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFD420PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFD420PBF is -55°C to 175°C.
  • To ensure reliability, follow proper PCB design and layout guidelines, use a suitable thermal management system, and ensure the device is operated within its specified ratings and conditions.
  • The recommended gate drive voltage for the IRFD420PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFD420PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB design and layout to minimize parasitic inductance and capacitance.
  • Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure the device is stored in an ESD-protective package.

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Part Image IRFD420PBF Vishay Siliconix

Power Field-Effect Transistor, 0.37A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRFD420 Vishay Siliconix

Power Field-Effect Transistor, 0.37A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET