Part Image

IRFH5053TRPBF - Infineon

Description: MOSFET 100V 1 N-CH HEXFET 18mOhms 24nC

Download IRFH5053TRPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
IRFH5053TRPBF - Infineon  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

IRFH5053TRPBF Details

  • Manufacturer Part Number:

    IRFH5053TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    21 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    9.3 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Pulsed Drain Current-Max (IDM):

    75 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFH5053TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFH5053TRPBF is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • To minimize EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the power traces short and wide, and use shielding or filtering components as needed.
  • Yes, the IRFH5053TRPBF is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure proper PCB layout and decoupling to minimize ringing and oscillations.
  • To protect the IRFH5053TRPBF, use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, such as zener diodes, TVS diodes, or fuses, to prevent damage from voltage spikes, surges, or excessive current.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

IRFH5053TRPBF Overview

Use the download button to access the IRFH5053TRPBF 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFH5, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFH5053TRPBF

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview