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IRFH5210TRPBF - Infineon

Description: Infineon IRFH5210TRPBF N-channel MOSFET, 10 A, 100 V HEXFET, 8-Pin PQFN

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IRFH5210TRPBF Details

  • Manufacturer Part Number:

    IRFH5210TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    86 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.0149 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    220 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFH5210TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFH5210TRPBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and monitoring junction temperature.
  • To minimize EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the power traces short and wide, and use shielding or filtering components as needed.
  • Yes, the IRFH5210TRPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching characteristics, gate drive requirements, and PCB layout to ensure reliable operation.
  • To protect the IRFH5210TRPBF, use overvoltage protection devices such as TVS diodes or zener diodes, and implement overcurrent protection using fuses or current-sensing resistors.

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IRFH5210TRPBF Overview

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