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IRFI4229PBF - Infineon

Description: MOSFET MOSFT 250V 19A 46mOhm 73nC

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PCB Footprints
IRFI4229PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 Full-Pak
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3D Models
IRFI4229PBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220 Full-Pak
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IRFI4229PBF Details

  • Manufacturer Part Number:

    IRFI4229PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    110 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    46 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFI4229PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFI4229PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
  • A good PCB layout should provide a low-thermal-resistance path from the device to the heat sink, and ensure good thermal conduction. Consult the application note and Infineon's PCB layout guidelines for more information.
  • Handle the device with ESD-protective equipment, use an ESD-protected workstation, and follow proper handling and storage procedures to prevent ESD damage.
  • The recommended gate drive circuits and components can be found in the application note and Infineon's gate drive design guidelines. Typically, a gate driver IC with a suitable voltage rating and current capability is recommended.

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